Photoresists at NCF
PRs
AZ 1518 for MLA 150
Spin Speed – 4000 rpm for 40 seconds
Baking – 100 C for 1 min
Exposure 85 mj/cm²
Defocus -1
Development – 1 minute in 1:3 (AZ 340 Developer : DI water) developer solution
The spin chart can be found here.
AZ 1518 for Mask Aligner
Spin Speed – 4000 rpm for 40 seconds
Baking – 90 C for 1 min
Exposure Time – 4.5 sec
Development – 1 minute in 1:3 (AZ 340 Developer : DI water) developer solution
The spin chart can be found here.
AZ 5214 E (Image Reversal)
Spin Speed – 4000 rpm for 40 seconds
Baking – 110 C for 1 min
Pattern Exposure – 1.5 sec
Reverse Baking – 110 C for 1 min
Flood Exposure – 50 sec
Development – 30 sec in 1:1 (AZ Developer : DI water) developer solution
More information is found here.
AZ 4330 - Positive Thick
Spin Speed – 4000 rpm for 40 seconds – ~3.4 um thickness
Baking – 110 C for 1 min
Pattern Exposure – 30 sec
Development – 45 sec in AZ Developer
More information is found here.
OIR-906 Positive Thin
Dehydration bake wafer at 120C for 5 minutes (or apply HMDS).
Spin on OIR-906 at 4KRPM for 40 seconds.
Prebake at 90C for 1 minute.
Expose for 4.5 to 5 seconds.
Postbake at 120C for 1 minute.
Develop in OPD4262 for 1 minute 30 seconds.
AZ1505 Positive Thin
HMDS Priming
- Clean Si wafer
- Place wafer in desiccator
- Add droplets of HMDS inside the vacuum Chamber
- Vacuum 30 min
- Remove wafer and proceed immediately
Spin Coating – AZ1505
- Dispense resist (sufficient volume)
- Spin: 4000 RPM → ~0.5 µm thickness
- Check for uniformity
Soft Bake
- 100 °C hotplate for 1 minute
- Cool to room temp
Exposure
- Contact exposure
- 2 s @ 15 mW/cm² (~30 mJ/cm²)
Development
- AZ Dev : DI = 1 : 1
- Develop 1–1.5 min
- DI rinse → N₂ dry