Photoresists at NCF

Spin Speed – 4000 rpm for 40 seconds

Baking – 90 C for 1 min

Exposure Time – 4.5 sec

Development – 30 seconds in 1:3 (AZ 340 Developer : DI water) developer solution

The spin chart can be found here.

Spin Speed – 4000 rpm for 40 seconds

Baking – 110 C for 1 min

Pattern Exposure – 1.5 sec

Reverse Baking – 110 C for 1 min

Flood Exposure – 50 sec

Development – 30 sec in 1:1 (AZ Developer : DI water) developer solution

More information is found here.

Spin Speed – 4000 rpm for 40 seconds – ~3.4 um thickness

Baking – 110 C for 1 min

Pattern Exposure – 30 sec

Development – 45 sec in AZ Developer

More information is found here.

Dehydration bake wafer at 120C for 5 minutes (or apply HMDS).

Spin on OIR-906 at 4KRPM for 40 seconds.

Prebake at 90C for 1 minute.

Expose for 4.5 to 5 seconds.

Postbake at 120C for 1 minute.

Develop in OPD4262 for 1 minute 30 seconds.